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d a t a sh eet product speci?cation october 1992 discrete semiconductors blf546 uhf push-pull power mos transistor
october 1992 2 philips semiconductors product speci?cation uhf push-pull power mos transistor blf546 features high power gain easy power control good thermal stability gold metallization ensures excellent reliability designed for broadband operation. description silicon n-channel enhancement mode vertical d-mos push-pull transistor designed for communications transmitter applications in the uhf frequency range. the transistor is encapsulated in a 4-lead, sot268 balanced flange envelope, with two ceramic caps. the mounting flange provides the common source connection for the transistors. pinning - sot268 pin description 1 drain 1 2 gate 1 3 gate 2 4 drain 2 5 source pin configuration caution the device is supplied in an antistatic package. the gate-source input must be protected against static charge during transport and handling. warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo discs are not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste. fig.1 simplified outline and symbol. handbook, halfpage mam395 1 2 4 3 5 top view d g s d g quick reference data rf performance at t h = 25 c in a push-pull common source test circuit. mode of operation f (mhz) v ds (v) p l (w) g p (db) h d (%) cw, class-b 500 28 80 > 11 > 50
october 1992 3 philips semiconductors product speci?cation uhf push-pull power mos transistor blf546 limiting values in accordance with the absolute maximum system (iec 134). per transistor section unless otherwise speci?ed. thermal resistance symbol parameter conditions min. max. unit v ds drain-source voltage - 65 v v gs gate-source voltage - 20 v i d dc drain current - 9a p tot total power dissipation up to t mb =25 c; total device; both sections equally loaded - 145 w t stg storage temperature - 65 150 c t j junction temperature - 200 c symbol parameter conditions thermal resistance r th j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 1.2 k/w r th mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.25 k/w fig.2 dc soar. (1) current in this area may be limited by r ds(on) . (2) t mb =25 c. total device; both sections equally loaded. handbook, halfpage 1 10 110 mra995 10 2 10 2 (1) i d (a) v ds (v) (2) fig.3 power/temperature derating curves. (1) continuous operation. (2) short-time operation during mismatch. total device; both sections equally loaded. handbook, halfpage 0 (1) (2) 40 80 p tot (w) t h ( c) 160 200 0 160 120 120 80 40 mda519
october 1992 4 philips semiconductors product speci?cation uhf push-pull power mos transistor blf546 characteristics (per section) t j = 25 c unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 20 ma 65 -- v i dss drain-source leakage current v gs = 0; v ds = 28 v -- 2ma i gss gate-source leakage current v gs = 20 v; v ds =0 -- 1 m a v gs(th) gate-source threshold voltage i d = 80 ma; v ds = 10 v 1 - 4v g fs forward transconductance i d = 2.4 a; v ds = 10 v 1.2 1.7 - s r ds(on) drain-source on-state resistance i d = 2.4 a; v gs = 10 v - 0.4 0.6 w i dsx on-state drain current v gs = 15 v; v ds = 10 v - 10 - a c is input capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 60 - pf c os output capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 46 - pf c rs feedback capacitance v gs = 0; v ds = 28 v; f = 1 mhz - 15 - pf fig.4 temperature coefficient of gate-source voltage as a function of drain current, typical values per section. v ds = 10 v. handbook, halfpage 12 - 4 4 8 0 mda520 i d (a) t.c. (mv/k) 110 10 - 2 10 - 1 fig.5 drain current as a function of gate-source voltage, typical values per section. v ds = 10 v; t j = 25 c. handbook, halfpage 0 12 8 4 0 4 v gs (v) i d (a) 816 12 mda521
october 1992 5 philips semiconductors product speci?cation uhf push-pull power mos transistor blf546 fig.6 drain-source on-state resistance as a function of junction temperature, typical values per section. i d = 2.4 a; v gs = 10 v. handbook, halfpage 0 40 80 160 0.8 0.6 0.2 0 0.4 120 mda522 r dson ( w ) t j ( c) fig.7 input and output capacitance as functions of drain-source voltage, typical values per section. v gs = 0; f = 1 mhz. handbook, halfpage 110 v ds (v) 20 40 250 0 200 30 150 100 50 c (pf) mda523 c is c os fig.8 feedback capacitance as a function of drain-source voltage, typical values per section. v gs = 0; f = 1 mhz. handbook, halfpage 01020 v ds (v) c rs (pf) 40 80 60 20 0 40 30 mda524
october 1992 6 philips semiconductors product speci?cation uhf push-pull power mos transistor blf546 application information for class-b operation t h = 25 c; r th mb-h = 0.25 k/w, unless otherwise speci?ed. rf performance in a common source, class-b, push-pull circuit. mode of operation f (mhz) v ds (v) i dq (ma) p l (w) g p (db) h d (%) cw, class-b 500 28 2 80 80 > 11 typ. 13 > 50 typ. 60 ruggedness in class-b operation the blf546 is capable of withstanding a full load mismatch corresponding to vswr = 10 through all phases under the following conditions: v ds = 28 v; f = 500 mhz at rated output power. fig.9 power gain and efficiency as functions of load power, typical values. class-b operation; v ds = 28 v; i dq = 2 80 ma; z l = 2.3 + j2.7 w (per section); f = 500 mhz. handbook, halfpage 40 60 80 g p (db) p l (w) 120 25 0 20 100 15 10 5 100 0 80 60 40 20 mda525 g p h c h c (%) fig.10 load power as a function of input power, typical values. class-b operation; v ds = 28 v; i dq = 2 80 ma; z l = 2.3 + j2.7 w (per section); f = 500 mhz. handbook, halfpage 0 120 80 40 0 4 p in (w) p l (w) 816 12 mda526
october 1992 7 philips semiconductors product speci?cation uhf push-pull power mos transistor blf546 list of components (class-b test circuit) component description value dimensions catalogue no. c1, c2 multilayer ceramic chip capacitor (note 1) 33 pf, 500 v c3 multilayer ceramic chip capacitor (note 1) 11 pf, 500 v c4, c6, c21, c22 ?lm dielectric trimmer 2 to 9 pf 2222 809 09005 c5 multilayer ceramic chip capacitor (note 2) 12 pf, 500 v c7, c10, c14, c15 multilayer ceramic chip capacitor (note 1) 390 pf, 500 v c8, c11, c12, c17 multilayer ceramic chip capacitor 100 nf, 50 v 2222 852 47104 c9 multilayer ceramic chip capacitor (note 2) 39 pf, 500 v c13, c16 electrolytic capacitor 4.7 m f, 63 v 2222 030 38478 c18, c19 multilayer ceramic chip capacitor (note 2) 18 pf, 500 v fig.11 test circuit for class-b operation. f = 500 mhz. handbook, full pagewidth mda530 d.u.t. blf546 c8 r3 l16 l17 r4 r1 r7 l20 r8 l21 r2 r5 r6 c7 l2 l1 l3 c1 v bias v bias c1 c3 c10 c11 l4 l6 l8 l10 l12 l5 l7 l9 l11 l13 + v d c4 c5 c6 c9 c14 c15 c12 c13 + v d c17 c16 50 w input c18 l14 l18 l22 l26 l28 l24 l27 l15 l19 l23 l25 c19 c20 c21 c22 50 w output c23 c24
october 1992 8 philips semiconductors product speci?cation uhf push-pull power mos transistor blf546 notes 1. american technical ceramics (atc) capacitor, type 100b or other capacitor of the same quality. 2. american technical ceramics (atc) capacitor, type 175b or other capacitor of the same quality. 3. the striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced ptfe ( e r = 2.2); thickness 1 32 inch. 4. semi-rigid cable l2 is soldered on to stripline l3. 5. semi-rigid cable l27 is soldered on to stripline l28. c20 multilayer ceramic chip capacitor (note 2) 15 pf, 500 v c23, c24 multilayer ceramic chip capacitor (note 1) 15 pf, 500 v l1, l3, l26, l28 stripline (note 3) 50 w 55.6 2.4 mm l2 semi-rigid cable (note 4) 50 w ext. dia. 2 mm ext. conductor length 55.6 mm l4, l5 stripline (note 3) 42 w 12 3 mm l6, l7 stripline (note 3) 42 w 26.5 3 mm l8, l9 stripline (note 3) 42 w 5.5 3 mm l10, l11 stripline (note 3) 42 w 6 3 mm l12, l13 stripline (note 3) 42 w 3 3 mm l14, l15 stripline (note 3) 42 w 7 3 mm l16, l17 3 turns enamelled 1 mm copper wire 15.6 nh length 8.5 mm int. dia. 5.4 mm leads 2 5 mm l18, l19 stripline (note 3) 42 w 12 3 mm l20, l21 grade 3b ferroxcube rf choke 4312 020 36642 l22, l23 stripline (note 3) 42 w 20 3 mm l24, l25 stripline (note 3) 42 w 14 3 mm l27 semi-rigid cable (note 5) 50 w ext. dia. 2 mm ext. conductor length 55.6 mm r1, r5 0.4 w metal ?lm resistor 11.5 k w 2322 151 71153 r2, r6 10 turns cermet potentiometer 50 k w r3, r4 0.4 w metal ?lm resistor 10 k w 2322 151 71003 r7, r8 1 w metal ?lm resistor 10 w 2322 153 51009 component description value dimensions catalogue no.
october 1992 9 philips semiconductors product speci?cation uhf push-pull power mos transistor blf546 fig.12 component layout for 500 mhz test circuit. the circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. dimensions in mm. handbook, full pagewidth mda518 straps straps l2 l1 l3 l27 l26 l28 c1 c2 l4 c3 c4 c5 l8 l9 r3 r4 c10 c11 c15 c7 c8 c14 c6 r2 r6 v d v d c9 c18 l12 l14 l15 c19 l18 l16 l17 c20 c21 r8 l21 c16 c17 c23 c24 c22 l19 l22 l20 c13 c12 r7 l23 l24 l25 l11 l13 l10 l5 l6 l7 85 200
october 1992 10 philips semiconductors product speci?cation uhf push-pull power mos transistor blf546 fig.13 input impedance as a function of frequency (series components), typical values per section. class-b operation; v ds = 28 v; i dq = 2 80 ma; p l = 80 w. handbook, halfpage 0 200 f (mhz) z i ( w ) x i 400 600 2 - 8 0 - 2 - 4 - 6 mda527 r i fig.14 load impedance as a function of frequency (series components), typical values per section. class-b operation; v ds = 28 v; i dq = 2 80 ma; p l = 80 w. handbook, halfpage 0 200 f (mhz) z l ( w ) 400 600 10 0 8 6 4 2 mda528 r l x l fig.15 power gain as a function of frequency, typical values per section. class-b operation; v ds = 28 v; i dq = 2 80 ma; p l = 80 w. handbook, halfpage 0 30 20 10 0 200 g p (db) f (mhz) 400 600 mda529
october 1992 11 philips semiconductors product speci?cation uhf push-pull power mos transistor blf546 package outline references outline version european projection issue date iec jedec eiaj sot268a 97-06-28 0 5 10 mm scale flanged double-ended ceramic package; 2 mounting holes; 4 leads sot268a d u 1 h 1 1 2 4 3 5 a u 2 h e p b q f c m c a w 3 m c w 2 e q b w 1 ab m unit a mm d b 1.66 1.39 0.13 0.07 12.96 12.44 6.45 17.02 16.00 6.61 6.35 4.91 4.19 c eu 2 0.26 0.51 1.02 w 3 18.42 qw 2 w 1 f 2.04 1.77 u 1 24.90 24.63 h 1 8.23 7.72 p 3.43 3.17 q 2.67 2.41 e 6.48 6.22 inches 0.065 0.055 0.005 0.003 0.510 0.490 0.254 0.670 0.630 0.260 0.250 0.193 0.165 0.01 0.02 0.04 0.725 0.080 0.070 0.980 0.970 0.324 0.304 0.135 0.125 0.105 0.095 0.255 0.245 h dimensions (millimetre dimensions are derived from the original inch dimensions)
october 1992 12 philips semiconductors product speci?cation uhf push-pull power mos transistor blf546 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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